ST NAND256W3A0AN6

ST · Memory ICs · MPN NAND256W3A0AN6

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Specifications

Memory Size256Mbit
Voltage - Supply2.7V~3.6V
Operating temperature-
Program / Erase Cycles100,000 cycles
Clock Frequency-
FeaturesCopy back write function;Hardware write protection function;Bad block management function;ECC error correction function…
Data Retention - TDR (Year)-
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current100uA
Interface-

Technical details

256Mbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS

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