ST NAND128W3A0AN6F

ST · Memory ICs · MPN NAND128W3A0AN6F

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Specifications

Memory Size128Mbit
Voltage - Supply2.7V~3.6V
Operating temperature-
Program / Erase Cycles100,000 cycles
Clock Frequency-
FeaturesCopy back write function;Bad block management function;Hardware write protection function;ECC error correction function…
Data Retention - TDR (Year)-
Block Erase Time(tBE)2ms
Page Programming Time (Tpp)200us
Write Cycle Time(tWC)-
Interface-
Standby Supply Current10uA

Technical details

128Mbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS

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