ST · Memory ICs · MPN NAND01GW3B2AZA6E
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| Memory Size | 1Gbit |
|---|---|
| Voltage - Supply | 2.7V~3.6V |
| Operating temperature | -25℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware write protection function;Power lock protection function;ECC err… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | - |
| Standby Supply Current | 100uA |
| Interface | - |
1Gbit 2.7V~3.6V VFBGA-63(9x11) Memory (ICs) RoHS