ST MJD45H11T4

ST · Transistors (BJTs) · MPN MJD45H11T4

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation20W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 80V 8A 20W Surface Mount DPAK

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