ST MJD350T4

ST · Transistors (BJTs) · MPN MJD350T4

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO3V
DC Current Gain30
Pd - Power Dissipation15W
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor PNP 300V 0.5A 15W Surface Mount TO-252

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