ST MJD31CT4-A

ST · Transistors (BJTs) · MPN MJD31CT4-A

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain10
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))1.2V

Technical details

100V 10 1 NPN NPN 3A TO-252-2 Single Bipolar Transistors RoHS

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