ST MJD3055T4

ST · Transistors (BJTs) · MPN MJD3055T4

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))-

Technical details

60V 20 1 NPN NPN 10A DPAK Single Bipolar Transistors RoHS

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