ST MJD112T4

ST · Transistors (BJTs) · MPN MJD112T4

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V

Technical details

100V 1000 NPN 2A TO-252 Single Bipolar Transistors RoHS

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