ST MJB44H11T4-A

ST · Transistors (BJTs) · MPN MJB44H11T4-A

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation50W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 80V 10A 50W Surface Mount D2PAK

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