ST BULB128-1

ST · Transistors (BJTs) · MPN BULB128-1

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Specifications

Current - Collector Cutoff250uA
Collector - Emitter Voltage VCEO400V
DC Current Gain14
Pd - Power Dissipation70W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))500mV

Technical details

400V 14 NPN 4A TO-262 Single Bipolar Transistors RoHS

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