ST BUL128D-B

ST · Transistors (BJTs) · MPN BUL128D-B

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Specifications

Current - Collector Cutoff500uA
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO18V
DC Current Gain10
Pd - Power Dissipation70W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))700mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220

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