ST BUL1102EFP

ST · Transistors (BJTs) · MPN BUL1102EFP

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Specifications

Current - Collector Cutoff100uA
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO12V
DC Current Gain12
Pd - Power Dissipation30W
ConfigurationHalf Bridge
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 450V 4A 30W Through Hole TO-220FP

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