ST BU508AW

ST · Transistors (BJTs) · MPN BU508AW

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Specifications

Current - Collector Cutoff2mA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO700V
Emitter-Base Voltage VEBO9V
DC Current Gain5
Pd - Power Dissipation125W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 700V 8A 125W Through Hole TO-247

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