ST BD681

ST · Transistors (BJTs) · MPN BD681

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Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain750
Pd - Power Dissipation40W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-

Technical details

100V 750 NPN 4A SOT-32-3 Single Bipolar Transistors RoHS

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