ST BD239C

ST · Transistors (BJTs) · MPN BD239C

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Specifications

Current - Collector Cutoff300uA
Collector - Emitter Voltage VCEO115V
Emitter-Base Voltage VEBO5V
DC Current Gain15
Pd - Power Dissipation30W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 115V 2A 30W Through Hole TO-220

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