ST BD139

ST · Transistors (BJTs) · MPN BD139

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain63
Pd - Power Dissipation12.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1.5A 12.5W Through Hole TO-126

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