ST 2STD1665T4

ST · Transistors (BJTs) · MPN 2STD1665T4

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Specifications

Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO7V
DC Current Gain150
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))260mV

Technical details

Bipolar (BJT) Transistor NPN 65V 6A 15W Surface Mount DPAK

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