ST 2ST501T

ST · Transistors (BJTs) · MPN 2ST501T

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO350V
DC Current Gain2000
Pd - Power Dissipation100W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1.5V

Technical details

350V 2000 NPN 4A TO-220 Single Bipolar Transistors RoHS

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