ST 2SD882

ST · Transistors (BJTs) · MPN 2SD882

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation12.5W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 100MHz 12.5W Through Hole TO-126

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