ST 2SD1047

ST · Transistors (BJTs) · MPN 2SD1047

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)20MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)12A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 140V 12A 20MHz 100W Through Hole TO-3P

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