SPTECH MJ3055

SPTECH · Transistors (BJTs) · MPN MJ3055

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain70
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation117W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))3V
Operating Temperature-55℃~+200℃

Technical details

Bipolar (BJT) Transistor NPN 60V 10A 2MHz 117W Through Hole TO-3

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