SPTECH MJ11029

SPTECH · Transistors (BJTs) · MPN MJ11029

No reviews yet — be the first to review SPTECH MJ11029.

Specifications

Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff2A
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain18000
Pd - Power Dissipation300W
typePNP
Current - Collector(Ic)50A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))3.5V

Technical details

60V 18000 PNP 50A TO-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)