SPTECH MJ11016

SPTECH · Transistors (BJTs) · MPN MJ11016

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Specifications

Vbe Saturation(VBE(sat))5V
Current - Collector Cutoff5mA
Collector - Emitter Voltage VCEO120V
DC Current Gain1000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200W
typeNPN
Current - Collector(Ic)30A
Vce Saturation(VCE(sat))4V
Operating Temperature-55℃~+200℃

Technical details

120V 1000 NPN 30A TO-3 Single Bipolar Transistors RoHS

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