SPTECH MJ10012

SPTECH · Transistors (BJTs) · MPN MJ10012

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Specifications

Current - Collector Cutoff1mA
Vbe Saturation(VBE(sat))3V
Vbe On(VBE(on))2.8V
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation175W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))2.5V@10A,2A
Operating Temperature-65℃~+150℃

Technical details

400V NPN 10A TO-3 Single Bipolar Transistors RoHS

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