SPTECH MJ10002

SPTECH · Transistors (BJTs) · MPN MJ10002

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Specifications

Collector - Emitter Voltage VCEO350V
Pd - Power Dissipation150W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))2.9V
Operating Temperature-65℃~+200℃

Technical details

350V NPN 10A TO-3 Single Bipolar Transistors RoHS

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