SPTECH MJ1000

SPTECH · Transistors (BJTs) · MPN MJ1000

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Specifications

Current - Collector Cutoff1mA
Vbe On(VBE(on))2.5V
Collector - Emitter Voltage VCEO60V
DC Current Gain1000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation90W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))4V
Operating Temperature-55℃~+200℃

Technical details

60V 1000 NPN 10A TO-3 Single Bipolar Transistors RoHS

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