SPTECH BUT11AI

SPTECH · Transistors (BJTs) · MPN BUT11AI

No reviews yet — be the first to review SPTECH BUT11AI.

Specifications

Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO9V
DC Current Gain17
Pd - Power Dissipation100W
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 450V 5A 100W Through Hole TO-220C

Related Transistors (BJTs)