SPTECH BDY58

SPTECH · Transistors (BJTs) · MPN BDY58

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO125V
DC Current Gain60
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation175W
Number1 NPN
typeNPN
Current - Collector(Ic)25A
Vce Saturation(VCE(sat))1.4V

Technical details

Bipolar (BJT) Transistor 125V 25A 10MHz 175W Through Hole TO-3

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