SPTECH BD650

SPTECH · Transistors (BJTs) · MPN BD650

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Specifications

Current - Collector Cutoff2mA
Vbe Saturation(VBE(sat))3V
Vbe On(VBE(on))2.5V
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation62.5W
typePNP
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2.5V@5A,50mA
Operating Temperature-65℃~+150℃

Technical details

100V 750 PNP 8A TO-220C Single Bipolar Transistors RoHS

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