SPTECH BD317

SPTECH · Transistors (BJTs) · MPN BD317

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)1MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain25
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation200W
Number1 NPN
typeNPN
Current - Collector(Ic)16A
Vce Saturation(VCE(sat))1V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 100V 16A 1MHz 200W Through Hole TO-3

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