SPTECH 3DD15B

SPTECH · Transistors (BJTs) · MPN 3DD15B

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Specifications

Current - Collector Cutoff500uA
Collector - Emitter Voltage VCEO100V
DC Current Gain250
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation50W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 100V 5A 50W Through Hole TO-3

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