SPTECH 2SD211

SPTECH · Transistors (BJTs) · MPN 2SD211

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 60V 10A 8MHz 100W Through Hole TO-3

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