SPTECH 2SD1710

SPTECH · Transistors (BJTs) · MPN 2SD1710

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO800V
DC Current Gain8
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation50W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 800V 5A 50W Through Hole TO-3PM

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