SPTECH 2SD111

SPTECH · Transistors (BJTs) · MPN 2SD111

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)1MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain300
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 80V 10A 1MHz 100W Through Hole TO-3

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