SPTECH 2SC5570

SPTECH · Transistors (BJTs) · MPN 2SC5570

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO800V
Emitter-Base Voltage VEBO6V
DC Current Gain8
Pd - Power Dissipation220W
Number1 NPN
typeNPN
Current - Collector(Ic)28A
Operating Temperature-
Vce Saturation(VCE(sat))5V

Technical details

Bipolar (BJT) Transistor NPN 800V 28A 220W Through Hole TO-3PL

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