SPTECH 2SA1386

SPTECH · Transistors (BJTs) · MPN 2SA1386

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain180
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation130W
Number1 PNP
typePNP
Current - Collector(Ic)15A
Operating Temperature-
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor PNP 160V 15A 40MHz 130W Through Hole TO-3PN

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