SPTECH 2N6491

SPTECH · Transistors (BJTs) · MPN 2N6491

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation75W
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))3.5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 80V 15A 5MHz 75W Through Hole TO-220C

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