SPTECH · Transistors (BJTs) · MPN 2N6052
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| Vbe Saturation(VBE(sat)) | 4V |
|---|---|
| Vbe On(VBE(on)) | 2.8V |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 18000 |
| Pd - Power Dissipation | 150W |
| type | PNP |
| Current - Collector(Ic) | 12A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 3V |
100V 18000 PNP 12A TO-3 Single Bipolar Transistors RoHS