SPTECH 2N5886

SPTECH · Transistors (BJTs) · MPN 2N5886

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200W
Number1 NPN
typeNPN
Current - Collector(Ic)25A
Vce Saturation(VCE(sat))4V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 80V 25A 4MHz 200W Through Hole TO-3

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