SPTECH 2N3055

SPTECH · Transistors (BJTs) · MPN 2N3055

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Specifications

Transition frequency(fT)2.5MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain70
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation115W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 115W Through Hole TO-3

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