Slkor MJD122D

Slkor · Transistors (BJTs) · MPN MJD122D

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Specifications

Current - Collector Cutoff-
Vbe Saturation(VBE(sat))4.5V
Vbe On(VBE(on))2.8V
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000~12000;100
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))2V;4V

Technical details

Bipolar (BJT) Transistor NPN 100V 8A 4MHz 1.75W Surface Mount TO-252

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