Shikues S8550T

Shikues · Transistors (BJTs) · MPN S8550T

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain350
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor PNP 25V 500mA 300mW Surface Mount SOT-523

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