Shikues PXT8550

Shikues · Transistors (BJTs) · MPN PXT8550

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain45
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

25V 45 1 PNP PNP 1.5A SOT-89 Single Bipolar Transistors RoHS

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