Shikues MMBT5551

Shikues · Transistors (BJTs) · MPN MMBT5551

No reviews yet — be the first to review Shikues MMBT5551.

Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount SOT-23

Related Transistors (BJTs)