Shikues MMBT3904DW

Shikues · Transistors (BJTs) · MPN MMBT3904DW

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation200mW
Number2 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-363

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