Shikues MMBT2222AT

Shikues · Transistors (BJTs) · MPN MMBT2222AT

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SOT-523

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