Shikues BCP55

Shikues · Transistors (BJTs) · MPN BCP55

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation1.33W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 130MHz 1.33W Surface Mount SOT-223

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