Shikues BCP52

Shikues · Transistors (BJTs) · MPN BCP52

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)115MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation1.3W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 60V 1A 115MHz 1300mW Surface Mount SOT-223

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