Shikues B772S

Shikues · Transistors (BJTs) · MPN B772S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 3A 80MHz 1000mW Surface Mount SOT-23

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