Shikues 2SD1000K

Shikues · Transistors (BJTs) · MPN 2SD1000K

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain120
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Surface Mount SOT-89

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